Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
Abstract: Die-to-die (D2D) placement is a more challenging stage in achieving higher performance with complex constraints, critically impacting timing, power, yield, cost, etc. Existing placers often ...
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