Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

Onsemi says the addition SiC JFET technology will complement its existing EliteSiC power portfolio and enable the company to ...

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Richard Hogg, chief technical officer of UK-based company III-V Epi, is advocating using GaAs epitaxial regrowth for many emerging, semiconductor laser applications.

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...

David Marshall, as director of programmes, will oversee Filtronic’s portfolio of critical programmes, driving strategic ...

Company adjusts figures around lower than expected market penetration of SiC epitaxy technology Veeco Instruments has updated its financial guidance for Q4 and the full year 2024 due to the market ...