Design-Reuse

Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...
Business Wire

Withwave Selects Menlo Microsystems’s Ideal Switch® For Radio Frequency (RF) and Microwave Switch Module Portfolio

SANTA CLARA, Calif.--(BUSINESS WIRE)--DesignCon Menlo Microsystems, Inc (Menlo Micro), the company responsible for bringing to market the greatest electronic component innovation since the transistor ...
Business Wire

Mitsubishi Electric to Launch 50W Silicon RF High-power MOSFET Module for Commercial Two-way Radio

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
Electronic Design

Bump Up Semiconductor Efficiency with GaN

Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
EDN

High Speed Gate Driver/MOSFET RF Modules

IXYS Colorado announced its new series, the IXZ631, an integrated high-speed gate driver and MOSFET RF modules featuring very low insertion inductance and isolated substrate. The product is designed ...
Electronic Design

Multiple Transistor Types Vie For RF Power-Amplifier Sockets

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.
EDN

Mitsubishi tunes RF parts for VHF, UHF, 800 MHz

Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...