Samsung Electronics has successfully stacked the next-gen 3D DRAM to 16 layers, twice as many as its competitor Micron. According to reports from TheElec and ZDNet Korea, citing industry sources, ...
Imagine trying to build a tower out of hundreds of very thin, slightly different sheets of material, where each sheet wants to bend or warp on its own. That’s essentially what researchers at imec and ...
“Emerging applications such as deep neural network demand high off-chip memory bandwidth. However, under stringent physical constraints of chip packages and system boards, it becomes very expensive to ...
TL;DR: Huawei is set to lead Apple by integrating high-performance HBM DRAM with 3D stacking technology in smartphones, boosting AI efficiency and bandwidth while reducing chip size. Apple plans to ...
TL;DR: NVIDIA envisions the future of AI compute with innovations like silicon photonics interposers, 3D stacked DRAM, and GPU tiers. The approach includes module-level cooling, die-to-die electrical ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
Samsung Electronics is currently dedicated to the R&D of 11nm level DRAM and ninth-generation 3D NAND Flash. The goal is to raise integration to the highest level in the industry, realize its existing ...