SANTA CLARA, Calif.--(BUSINESS WIRE)--DesignCon Menlo Microsystems, Inc (Menlo Micro), the company responsible for bringing to market the greatest electronic component innovation since the transistor ...
IXYS Colorado announced its new series, the IXZ631, an integrated high-speed gate driver and MOSFET RF modules featuring very low insertion inductance and isolated substrate. The product is designed ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...
LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.
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