A new technical paper titled “Resistive Switching Random-Access Memory (RRAM): Applications and Requirements for Memory and Computing” was published by researchers at Politecnico di Milano, IUNET and ...
Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...
Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...
Note: Removal of CeraMemory and CeraTape per company request. This article discusses two interesting memory (and spin-based logic) announcements. At the 2023 SNIA Storage Developers Conference (SDC) a ...
For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...
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