Santa Clara, CA and Kyoto, Japan, April 25, 2023 (GLOBE NEWSWIRE) -- Kyoto-based ROHM Semiconductor and Semikron Danfoss have been collaborating for more than ten years with regards to the ...

The newly released CMT‑PLA1BL12300MA combines CISSOID’s advanced switching technology with the widely used CPAK‑EDC package, aiming to deliver a reliable and cost‑effective solution for systems ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have ...

MILPITAS, Calif. & BIEL, Switzerland--(BUSINESS WIRE)-- IXYS Corporation (NAS: IXYS) , a manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, and ...

Local power that is available for protection circuits, such as desaturation detection. Among the disadvantages of this type of driver are the cost, complexity and board space required for all the ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc., a global leader in silicon carbide technology, today announced its new 1200V SiC six-pack power modules that redefine performance benchmarks for ...

IXYS Corporation announces the expansion of its XPT IGBT product line with the release of new discrete highspeed, high-gain 1200V products. The new devices feature high current ratings (105A – 160A, ...

IXYS Corporation announced the introduction of a new range of IGBT modules for high power applications. The new IXYS SIMBUS F module is an industry standard outline optimized for IGBT phase leg ...