Size and power often seem like opposite sides of a coin. When you reduce size – one of the ever-pressing goals in our industry – you inevitably reduce power. But does that have to be the case? By ...
Infineon has added four current ratings to its EconoDual 3 portfolio of 1.2kV dual IGBT modules. Rated at 300, 450, 600 and 900A (see table below) the transistor pair inside the modules is connected ...
Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...
New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
Power Integrations developed base boards for a quick and low-cost IGBT stack design capable of driving 1.7 kV, 2.5 kV or 3.3 kV IGBTs. The 2BB0535T is a plug-and-play solution for 2SC0535T driver ...
NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...
TOKYO, January 14, 2025--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as ...
Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...
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