New GaN power electronics are being developed for power conversion and delivery. In electric transportation such as Electric and Hybrid Electric Vehicles (EV and HEV), these devices are becoming ...

The semiconductor industry is developing the next wave of applications for atomic layer etch (ALE), hoping to get a foothold in some new and emerging markets. ALE, a next-generation etch technology ...

Gallium nitride has become the de facto material in third-generation semiconductors. However, making GaN epi wafers in the quality you need and the thermal resistance you desire are challenges that ...

JST announces the successful development of a high-quality bulk GaN growth device based on the THVPE method, a development topic of the Newly extended Technology transfer Program (NexTEP). Development ...