EDN

Toshiba cuts capacitor from DRAM cell design

TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
Mena FN

Imec Demonstrates Capacitor-less IGZO-Based DRAM Cell With &gt 400s Retention Time

(MENAFN- PR Newswire) LEUVEN, Belgium, Dec. 15, 2020 /PRNewswire/ -- This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics ...
Design-Reuse

Unleashing the Power of Embedded DRAM

Embedded DRAM technology offers many advantages in System On Chip products. Computing applications demand memory with low latency and zero soft error rate. Graphics ...
Electronic Design

Scaling The 1T DRAM Cell

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...
New Electronics

Imec demonstrates capacitor-less IGZO-based DRAM cell

imec, the research and innovation hub in nanoelectronics, has presented a dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors ...
sciencex

Imec Demonstrates Capacitor-less IGZO-Based DRAM Cell With >400s Retention Time

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...