SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
The SCT2450KE is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. The SCT2450KE is an SiC (Silicon ...
WASHINGTON, D.C., Oct. 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. Enter wide ...
Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Silicon carbide is gaining traction in the power semiconductor market, particularly in electrified vehicles, but it’s still too expensive for many applications. The reasons are well understood, but ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
The automotive sector is seeing a surge in the number of electronic components required, driven by demand for enhanced safety and convenience. At the same time, there’s a pressing need for improved ...
Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing ...
Toshiba has launched a 30V dual mosfet that integrates both N-channel and P-channel mosfets in a single package. The product is suitable for applications including single-phase brushless DC (BLDC) ...
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