Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.
EDN

Power-Thru Isolated Gate Driver: Compact and Efficient GaN FET Control

Allegro MicroSystems has introduced its newest device, the AHV85110 Power-Thru isolated gate driver. As the first member of Allegro’s Power-Thru product family, the AHV85110 promises to deliver twice ...
EDN

Gate driver duo optimizes GaN FET design

A two-chip set from Allegro delivers isolated gate drive for e-mode GaN FETs in multiple applications and topologies. Comprising the AHV85000 and AHV85040, the pair of ICs is the third product in the ...
Electronic Design

A New Generation of GaN Power ICs Mimic Silicon MOSFETs

Gallium nitride (GaN) is winning over the world of power electronics with its faster switching speeds and higher efficiency over that of silicon MOSFETs, which have dominated for decades. But nothing ...
Nasdaq

ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds ...